Integrated assemblies and methods of forming integrated assemblies

ABSTRACT

Some embodiments include an integrated transistor having an active region comprising semiconductor material. The active region includes a first source/drain region, a second source/drain region and a channel region between the first and second source/drain regions. A conductive gating structure is operatively proximate the channel region and comprises molybdenum. The integrated transistor may be incorporated into integrated memory, such as, for example, DRAM, FeFET memory, etc. Some embodiments include methods of forming integrated assemblies and devices, such as, for example, integrated transistors, integrated memory, etc.

TECHNICAL FIELD

Integrated assemblies and devices (e.g., integrated transistors,integrated memory). Methods of forming integrated assemblies.

BACKGROUND

Transistors are utilized in a variety of semiconductor devices. Fieldeffect transistors (FETs) include a channel region between a pair ofsource/drain regions, and include one or more gates configured toelectrically connect the source/drain regions to one another through thechannel region.

Vertical FETs (VFETs) have channel regions that are generallyperpendicular to a primary surface of a substrate on which thetransistors are formed.

The transistors may be incorporated into memory arrays, and may beutilized as access devices for memory cells of the memory arrays.

It is desired to develop new methods for forming integrated transistorsand integrated memory. It is also desired to develop new transistorconfigurations, and new assemblies (e.g., memory assemblies) utilizingthe new transistor configurations.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-6 are diagrammatic cross-sectional side views of a region of anexample integrated assembly at example sequential process stages of anexample method.

FIGS. 1A, 5A and 6A are diagrammatic top-down views of regions of theexample integrated assembly at the process stages of FIGS. 1, 5 and 6 ,respectively. FIGS. 1, 5 and 6 are along the lines A-A of FIGS. 1A, 5Aand 6A, respectively.

FIG. 7 is a diagrammatic schematic view of a region of an example memoryarray.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Some embodiments include methods of forming transistors in whichtemplate material (e.g., silicon) is replaced with metal (e.g., one ormore of molybdenum (Mo), tungsten (W), tantalum (Ta), titanium (Ti),cobalt (Co) and nickel (Ni)) to form conductive gating structures of thetransistors. The transistors may be incorporated into integrated memory,and the conductive gating structures may be incorporated into wordlinesof such memory.

Some embodiments include transistors having molybdenum within conductivegating material. Some embodiments include integrated assemblies (e.g.,integrated memory) comprising such transistors.

Example embodiments are described with reference to FIGS. 1-7 .

Referring to FIG. 1 , an integrated assembly (construction,architecture) 10 includes a conductive line 12, and includessemiconductor material 14 supported over the conductive line 12.

The conductive line 12 extends along an illustrated x-axis direction.The conductive line 12 comprises conductive material 16. The conductivematerial 16 may comprise any suitable electrically conductivecomposition(s); such as, for example, one or more of various metals(e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium, etc.),metal-containing compositions (e.g., metal silicide, metal nitride,metal carbide, etc.), and/or conductively-doped semiconductor materials(e.g., conductively-doped silicon, conductively-doped germanium, etc.).

In some embodiments, the conductive line 12 may correspond to a digitline (bitline, sense line, etc.).

The semiconductor material 14 is shown to be patterned into a pluralityof pillars 18, with such pillars being spaced from one another along thex-axis direction. Gaps 20 are between the spaced-apart pillars 18. Inthe shown embodiment, regions of the semiconductor material 14 extendalong an upper surface 17 of the conductive line 12 within the gaps 20.In other embodiments, such regions of the semiconductor material 14 maybe omitted so that the upper surface 17 of the conductive line 12 isexposed within the gaps 20 at the process stage of FIG. 1 .

Each of the pillars 18 comprises a pair of sidewalls surfaces 21 a and21 b along the cross-section of FIG. 1 , and comprises a top surface 23extending between the sidewall surfaces 21 a and 21 b. In someembodiments, the sidewall surfaces 21 a may be referred to as firstsidewall surfaces, and the sidewall surfaces 21 b may be referred to assecond sidewall surfaces which are laterally disposed relative to thefirst sidewall surfaces.

The upper surface 17 of the conductive line 12 may be considered to be ahorizontally-extending upper surface. The pillars 18 extend verticallyalong an illustrated z-axis direction, and accordingly extendorthogonally (or at least substantially orthogonally) relative to thehorizontally-extending upper surface 17. The term “substantiallyorthogonally” means orthogonally to within reasonable tolerances offabrication and measurement. In some embodiments, the pillars 18 may beconsidered to extend vertically, or at least substantially vertically.In some applications, the pillars 18 may extend at an angle of about 90°(i.e., 90°±10°) relative to the horizontally-extending surface 17.

The sidewalls 21 a and 21 b may be vertically straight (as shown) or maybe tapered along the vertical direction.

The semiconductor material 14 may comprise any suitable composition(s);and in some embodiments may comprise, consist essentially of, or consistof one or more of silicon, germanium, III/V semiconductor material(e.g., gallium phosphide), semiconductor oxide (e.g., indium galliumzinc oxide), etc.; with the term III/V semiconductor material referringto semiconductor materials comprising elements selected from groups IIIand V of the periodic table (with groups III and V being oldnomenclature, and now being referred to as groups 13 and 15). In someembodiments, the semiconductor material 14 may comprise, consistessentially of, or consist of silicon. The silicon may be in anysuitable phase (e.g., amorphous, polycrystalline, monocrystalline,etc.).

In the shown embodiment, each of the pillars 18 includes a lowersource/drain region 22, an upper source/drain region 24, and a channelregion 26 vertically between the upper and lower source/drain regions.In some embodiments, the upper and lower source/drain regions 22 and 24may be n-type regions. In applications in which the semiconductormaterial 14 comprises silicon, the upper and lower source/drain regions22 and 24 may be conductively doped with suitable n-type dopant (e.g.,phosphorus, arsenic, etc.). The channel regions 26 may be doped withappropriate dopant to achieve desired threshold-voltage levels.

Dashed lines are provided between the channel region 26 and thesource/regions 22 and 24 to illustrate approximate boundaries betweenthe channel region and the source/drain regions.

The lower source/drain regions 22 are electrically coupled with theconductive line 12, and in the shown embodiment are directly againstsuch conductive line.

The conductive line 12 is shown to be over an insulative material 28,which in turn is supported by a base 30.

The insulative material 28 may comprise any suitable composition(s),including, for example, one or more of silicon dioxide, silicon nitride,hafnium oxide, aluminum oxide, zirconium oxide, etc.

The base 30 may comprise semiconductor material; and may, for example,comprise, consist essentially of, or consist of monocrystalline silicon.The base 30 may be referred to as a semiconductor substrate. The term“semiconductor substrate” means any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductor substrates described above. In someapplications, the base 30 may correspond to a semiconductor substratecontaining one or more materials associated with integrated circuitfabrication. Such materials may include, for example, one or more ofrefractory metal materials, barrier materials, diffusion materials,insulator materials, etc.

A gap is provided between the base 30 and the insulative material 28 toindicate that additional structures and materials may be providedbetween the base 30 and the insulative material 28 in some embodiments.

In the illustrated embodiment, conductive material 34 is provided overthe upper surfaces 23 of the pillars 18, and protective capping material36 is provided over the conductive material 34.

The conductive material 34 may comprise any suitable electricallyconductive composition(s); such as, for example, one or more of variousmetals (e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium,etc.), metal-containing compositions (e.g., metal silicide, metalnitride, metal carbide, etc.), and/or conductively-doped semiconductormaterials (e.g., conductively-doped silicon, conductively-dopedgermanium, etc.). In some embodiments, the conductive material 34 maycomprise metal (e.g., tungsten) over metal silicide (e.g., tungstensilicide).

The conductive material 34 may be referred to as conductive interconnectmaterial, and is ultimately utilized for electrically coupling the uppersource/drain regions 24 with additional structures (described below withreference to FIG. 6 ). In some embodiments, the conductive material 34may be omitted.

The capping material 36 may comprise any suitable composition(s), and insome example embodiments may comprise, consist essentially of, orconsist of silicon nitride.

FIG. 1A shows a region of the assembly 10 in top-down view, and showsthat the conductive line 12 of FIG. 1 is representative of multipleconductive lines which extend along the x-axis direction. The conductivelines 12 are diagrammatically indicated with dashed-line (phantom) viewin FIG. 1A to indicate that they are beneath other structures.

The conductive lines 12 may be referred to as first conductive lines,and may be considered together to correspond to a series of the firstconductive lines. Such series may be referred to as a first series todistinguish it from another series of conductive lines described at asubsequent process stage (FIG. 5 ). In some embodiments, the conductivelines 12 may correspond to digit lines. In some embodiments, theconductive lines 12 may be referred to as linearly-extending conductivestructures. Although the conductive lines 12 are shown to be straight,in other embodiments the conductive lines 12 may be curved, wavy, etc.

FIG. 1A shows the pillars 18 contained within linearly-extendingstructures 38. The structures 38 extend along an illustrated y-axisdirection. In some embodiments, the x-axis direction may be referred toas a first direction, and the y-axis direction may be referred to as asecond direction which intersects the first direction. Although thesecond direction is shown to be substantially orthogonal to the firstdirection (with the term “substantially orthogonal” meaning orthogonalto within reasonable tolerances of fabrication and measurement), inother embodiments the second direction may cross the first directionwithout being substantially orthogonal to the first direction.

The linearly-extending structures 38 include insulative blocks 40alternating with the pillars 18 along the second direction (i.e., they-axis direction). The blocks 40 comprise insulative material 42. Theinsulative material 42 may comprise any suitable composition(s), and insome embodiments may comprise, consist essentially of, or consist of oneor more of silicon nitride, silicon oxide, aluminum oxide, etc. In someembodiments, each of the linearly-extending structures 38 may beconsidered to comprise a series of the pillars 18 and a series of theinsulative blocks 40.

Each of the linearly-extending structures 38 has a pair of opposingsidewalls, with such opposing sidewalls corresponding to the sidewalls21 a and 21 b described above with reference to FIG. 1 .

FIG. 1A shows that the gaps 20 described above with reference to FIG. 1may be understood to correspond to trenches. Such trenches are betweenthe linearly-extending structures 38, and extend along the seconddirection (i.e., the y-axis direction).

Referring to FIG. 2 , insulative material 44 is formed along thesidewalls 21 a and 21 b of the pillars 18. In the illustratedembodiment, the insulative material 44 extends over the pillars 18, andwithin the gaps 20 between the pillars. In other embodiments, theinsulative 44 may be formed to be only along the sidewalls 21 a and 21 bof the pillars 18, and in some embodiments may be formed only alongsidewalls of the channel regions 26 of the pillars 18.

The insulative material 44 may comprise any suitable composition(s). Insome embodiments, the insulative 44 may comprise, consist essentiallyof, or consist of silicon dioxide (SiO₂). In some embodiments, theinsulative material 44 may include one or more high-k materials eitherin addition to the silicon dioxide, or alternatively to the silicondioxide. The term “high-k” means a dielectric constant greater than thatof silicon dioxide (i.e., greater than about 3.9). Example high-kdielectric materials include aluminum oxide, hafnium oxide, zirconiumoxide, silicon nitride, etc.

In some embodiments, the insulative material 44 may be referred to asgate dielectric material.

Insulative steps 46 are formed within lower regions of the gaps(trenches) 20. In the shown embodiment, the steps 46 have upper surfaces47 which are approximately coextensive with the boundary between thelower source/drain regions 22 and the channel regions 26. In otherembodiments, the upper surfaces 47 of the steps 46 may be formed atother suitable levels. As will become clear from the discussion follows,the upper surfaces 47 of the steps 46 may be utilized to calibratelocations of wordlines (specifically, may define the locations forbottom surfaces of the wordlines).

The steps 46 comprise insulative material 48. The insulative material 48may comprise any suitable composition(s), and in some embodiments maycomprise, consist essentially of, or consist of silicon nitride. In someembodiments, the material 48 of the steps 46 may be the same compositionas the insulative capping material 36, and in other embodiments thematerials 36 and 48 may be different compositions relative to oneanother.

Referring to FIG. 3 , a layer of template material 50 is formed over thelinearly-extending structures 38 and within the trenches 20. Thetemplate material 50 within the trenches 20 extends across the uppersurfaces 47 of the insulative steps 46.

The template material 50 may comprise any suitable composition(s), andin some embodiments may comprise, consist essentially of, or consist ofsilicon. The silicon may be in any suitable crystalline form (e.g.,polycrystalline, amorphous, monocrystalline, etc.).

The template material 50 may be formed to any suitable thickness, and insome embodiments may be formed to a thickness within a range of fromabout 10 angstroms (Å) to about 100 Å.

Referring to FIG. 4 , the template material 50 is etched to remove thetemplate material from over the capping material 36, and to removeportions of the template material from over the insulative steps 46.Remaining segments of the template material 50 are patterned intotemplate structures 52. In the shown embodiment, the template structures52 are aligned with the channel regions 26. The template structures 52may be linear structures which extend along the sidewall surfaces 21 aand 21 b. The template structures 52 are supported by the insulativesteps 46.

The etching of the template material 50 may utilize any suitablemethodology. For instance, in some embodiments the etching may utilize areactive ion etch (RIE), either with or without plasma. In someembodiments, the etching may utilize tetramethylammonium hydroxide(TMAH). The template material 50 may have a first thickness (an originalthickness) prior to the etch and may have a second thickness after theetch. The second thickness may be the same as the first thickness, ormay be less than the first thickness. In some embodiments, the secondthickness may be within a range of from about 10% to about 100% of thefirst thickness.

Referring to FIG. 5 , the template material 50 (FIG. 4 ) is replacedwith metal-containing structures 54. Such replacement may compriseexposing the template material 50 to one or more metal-halide precursors(e.g., MoF₆) under conditions which include a temperature within a rangeof from about 100° C. to about 1000° C., and a pressure within a rangeof from about 1 mTorr (millitorr) to about atmospheric. Themetal-containing precursor(s) consume the template material 50 andeventually replace the template structures 52 (FIG. 4 ) with themetal-containing structures 54. In some embodiments, the processingutilized to replace the template material structures 52 with themetal-containing structures 54 may utilize a relatively low temperature(e.g., a temperature of less than or equal to about 300° centigrade),which may advantageously be suitable for utilization withtemperature-sensitive materials and components that may be present on asemiconductor die during the processing utilized to form themetal-containing structures 54.

An advantage of forming the metal-containing structures 54 frommetal-halide precursor(s) is that such may advantageously avoidproblematic carbon contamination of the metal-containing materialanalogous to problematic contamination that may occur in conventionalprocesses in which metallo-organic precursors are utilized.

The structures 54 comprise metal-containing material 56. Themetal-halide precursor(s) may include or more of molybdenum, tungsten,tantalum, titanium, cobalt and nickel. Accordingly, the metal-containingmaterial 56 may comprise, consist essentially of, or consist of one ormore of molybdenum (Mo), tungsten (W), tantalum (Ta), titanium (Ti),cobalt (Co) and nickel (Ni). In some example embodiments, themetal-containing material 56 may comprise, consist essentially of, orconsist of molybdenum. An advantage of molybdenum is that such may havehigh conductivity, even when formed into extremely thin structures. Insome embodiments, the metal-containing structures 54 may have lateralthicknesses T₁ within a range of from about 10 Å to about 100 Å.

FIG. 5A is a top-down view of a region of the assembly 10 at the processstage of FIG. 5 . The metal-containing structures 54 are configured asconductive lines which extend along the second direction (i.e., they-axis direction). In some embodiments, the conductive lines 54 may bereferred to as second conductive lines, and may be considered togetherto correspond to a series. Such series may be referred to as a secondseries to distinguish it from the first series of the first conductivelines 12. In some embodiments, the conductive lines 54 may correspond towordlines. In some embodiments, the conductive lines 54 may be referredto as linearly-extending conductive structures. Although the conductivelines 54 are shown to be straight, in other embodiments the conductivelines 54 may be curved, wavy, etc.

Referring again to FIG. 5 , the conductive lines 54 may be considered toinclude gating regions (gating structures) 58 proximate the channelregions 26 of the pillars 18. The gating regions 58 are spaced from(i.e., laterally offset from) the channel regions by at least theinsulative material 44. In some embodiments, the gating regions 58 maybe considered to be operatively proximate the channel regions 26. Agating region is “operatively proximate” a channel region of an accessdevice when the gating region and the channel region are oriented suchthat a sufficient voltage applied to the gating region will induce anelectric field which enables current flow through the channel region toelectrically couple the source/drain regions (i.e., regions 22 and 24)on opposing sides of the channel region with one another. If the voltageto the gating region is below a threshold level, the current will notflow through the channel region, and the source/drain regions onopposing sides of the channel region will not be electrically coupledwith one another. The selective control of the coupling/decoupling ofthe source/drain regions through the level of voltage applied to thegating region may be referred to as gated coupling of the source/drainregions.

The conductive lines 12 FIGS. 5 and 5A are labeled as digit linesDL1-DL8, and the conductive lines 54 of FIGS. 5 and 5A are labeled aswordlines WL1-WL4. In the illustrated embodiment, paired lines 54 arecoupled with another to form the wordlines WL1-WL4. The digit linesDL1-DL8 extend along a first direction corresponding to an illustratedx-axis direction, and the wordlines WL1-WL4 extend along a seconddirection corresponding to an illustrated y-axis direction. The seconddirection of the wordlines crosses the first direction of the digitlines. In the shown embodiment, the second direction of the wordlines isorthogonal to (or at least substantially orthogonal to) the firstdirection of the digit lines, with the term “substantially orthogonal”meaning orthogonal to within reasonable tolerances of fabrication andmeasurement. In other embodiments, the wordlines may cross the digitlines at other angles.

Referring to FIGS. 6 and 6A, insulative material 60 is formed within thetrenches 20 and over the conductive lines 54. The insulative material 60may comprise any suitable composition(s), and in some embodiments maycomprise, consist essentially of, or consist of silicon dioxide.

A planarized surface 61 is formed to extend across the materials 34, 44and 60. In the shown embodiment, the formation of the planarized surface61 removes the capping material 36 (FIG. 5 ).

The planarized surface 61 may be formed with any suitable processing,including, for example, chemical-mechanical polishing (CMP).

The conductive lines 12 and 54 are diagrammatically indicated in FIG. 6Awith dashed-line (phantom) view to indicate that they are beneath otherstructures.

Storage elements 62 are electrically coupled with the upper source/drainregions 24. The storage elements 62 may be any suitable devices havingat least two detectable states; and in some embodiments may be, forexample, capacitors, resistive-memory devices, conductive-bridgingdevices, phase-change-memory (PCM) devices, programmable metallizationcells (PMCs), etc. If the storage elements are capacitors, they may beeither ferroelectric capacitors (i.e., may comprise ferroelectricinsulative material between a pair of capacitor electrodes) or may benon-ferroelectric capacitors (i.e., may comprise only non-ferroelectricinsulative material between a pair of capacitor electrodes). Exampleferroelectric insulative material may include one or more of transitionmetal oxide, zirconium, zirconium oxide, niobium, niobium oxide,hafnium, hafnium oxide, lead zirconium titanate, and barium strontiumtitanate. Example non-ferroelectric insulative material may comprise,consist essentially of, or consist of silicon dioxide.

The pillars 18 may be considered to be active regions of transistors(access devices) 64, with such transistors also including the gatingregions 58 operatively proximate the channel regions 26. The storageelements 62 and transistors 64 may be incorporated into a memory array66.

The memory array 66 may have any suitable configuration. FIG. 7 shows anexample configuration in which the storage elements 62 are capacitors.The capacitors may be non-ferroelectric capacitors, and accordingly thememory array 66 may be a dynamic random access memory (DRAM) array.Alternatively, the capacitors may be ferroelectric capacitors, andaccordingly the memory array 66 may be a ferroelectric random accessmemory (FeRAM) array.

The illustrated capacitors 62 have an electrical node coupled with anaccess transistor 64, and have another electrical node coupled with areference 68. The reference 68 may correspond to any suitable referencevoltage, including, ground, VCC/2, etc.

The wordlines 54 are shown coupled with wordline-driver-circuitry 70,and the digit lines 12 are shown coupled with sense-amplifier-circuitry72. The access transistors 64 and storage elements 62 together formmemory cells 80, with each of the memory cells being uniquely addressedby one of the digit lines 12 in combination with one of the wordlines54. Example memory cells 80 are also labeled in FIG. 6 to assist thereader in understanding that the example memory cells 80 may include theillustrated transistors 64 together with the illustrated storageelements 62.

The assemblies and structures discussed above may be utilized withinintegrated circuits (with the term “integrated circuit” meaning anelectronic circuit supported by a semiconductor substrate); and may beincorporated into electronic systems. Such electronic systems may beused in, for example, memory modules, device drivers, power modules,communication modems, processor modules, and application-specificmodules, and may include multilayer, multichip modules. The electronicsystems may be any of a broad range of systems, such as, for example,cameras, wireless devices, displays, chip sets, set top boxes, games,lighting, vehicles, clocks, televisions, cell phones, personalcomputers, automobiles, industrial control systems, aircraft, etc.

Unless specified otherwise, the various materials, substances,compositions, etc. described herein may be formed with any suitablemethodologies, either now known or yet to be developed, including, forexample, atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), etc.

The terms “dielectric” and “insulative” may be utilized to describematerials having insulative electrical properties. The terms areconsidered synonymous in this disclosure. The utilization of the term“dielectric” in some instances, and the term “insulative” (or“electrically insulative”) in other instances, may be to providelanguage variation within this disclosure to simplify antecedent basiswithin the claims that follow, and is not utilized to indicate anysignificant chemical or electrical differences.

The terms “electrically connected” and “electrically coupled” may bothbe utilized in this disclosure. The terms are considered synonymous. Theutilization of one term in some instances and the other in otherinstances may be to provide language variation within this disclosure tosimplify antecedent basis within the claims that follow.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. Thedescriptions provided herein, and the claims that follow, pertain to anystructures that have the described relationships between variousfeatures, regardless of whether the structures are in the particularorientation of the drawings, or are rotated relative to suchorientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections, unless indicatedotherwise, in order to simplify the drawings.

When a structure is referred to above as being “on”, “adjacent” or“against” another structure, it can be directly on the other structureor intervening structures may also be present. In contrast, when astructure is referred to as being “directly on”, “directly adjacent” or“directly against” another structure, there are no interveningstructures present. The terms “directly under”, “directly over”, etc.,do not indicate direct physical contact (unless expressly statedotherwise), but instead indicate upright alignment.

Structures (e.g., layers, materials, etc.) may be referred to as“extending vertically” to indicate that the structures generally extendupwardly from an underlying base (e.g., substrate). Thevertically-extending structures may extend substantially orthogonallyrelative to an upper surface of the base, or not.

Some embodiments include an integrated transistor having an activeregion comprising semiconductor material. The active region includes afirst source/drain region, a second source/drain region and a channelregion between the first and second source/drain regions. A conductivegating structure is operatively proximate the channel region andcomprises molybdenum.

Some embodiments include an integrated assembly having a first series offirst conductive lines. The first conductive lines extend along a firstdirection. Pillars of semiconductor material extend upwardly from thefirst conductive lines. Each of the pillars includes a lowersource/drain region, an upper source/drain region and a channel regionbetween the upper and lower source/drain regions. The pillars havesidewalls. The lower source/drain regions are coupled with the firstconductive lines. Insulative material is along the sidewalls. A secondseries of second conductive lines extends along a second direction whichcrosses the first direction. The second conductive lines include gatingregions operatively proximate the channel regions. The gating regionsare laterally offset from the channel regions by at least the insulativematerial. The second conductive lines comprise molybdenum. Storageelements are coupled with the upper source/drain regions.

Some embodiments include a method of forming an integrated assembly. Aconstruction is formed to include a first series of first conductivelines, and to include pillars of semiconductor material extendingupwardly from the first conductive lines. The first conductive linesextend along a first direction. Each of the pillars includes a lowersource/drain region, an upper source/drain region and a channel regionbetween the upper and lower source/drain regions. The pillars havesidewalls. The lower source/drain regions are coupled with the firstconductive lines. Upper surfaces of the pillars are protected with acapping material. The pillars are arranged along linearly-extendingstructures. The linearly-extending structures extend along a seconddirection which crosses the first direction. Each of thelinearly-extending structures includes a series of the pillars and aseries of insulative blocks, with the insulative blocks alternating withthe pillars along the second direction. Each of the linearly-extendingstructures has a pair of opposing sidewalls along a cross-section.Insulative material is formed along the sidewalls. Trenches are betweenadjacent of the linearly-extending structures and extend along thesecond direction. Insulative steps are formed within lower regions ofthe trenches. Template structures are formed adjacent the insulativematerial and are supported by the insulative steps. The templatestructures extend along the sidewalls of the linearly-extendingstructures. The template structures comprise template material. One ormore metal-halide precursor materials are utilized to consume thetemplate material and to thereby replace the template structures withmetal-containing structures. The metal-containing structures areconfigured as a second series of second conductive lines. The secondconductive lines extend along the second direction. The secondconductive lines include gating regions operatively proximate thechannel regions, with said gating regions being laterally offset fromthe channel regions by at least the insulative material. The cappingmaterial is removed, and storage elements are formed to be coupled withthe upper source/drain regions.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

I claim:
 1. An integrated transistor, comprising: an active regioncomprising a semiconductor material structure having avertically-extending pillar portion and opposing horizontally-extendingsections that extend outwardly from a lower region of the pillarportion; the pillar portion including a first source/drain region, asecond source/drain region and a channel region between the first andsecond source/drain regions; an insulative material along sidewalls ofthe pillar portion and over the opposing sections; and a conductivegating structure operatively proximate the channel region and comprisingmolybdenum, the conductive gating structure being spaced from the pillarportion and the opposing sections of the semiconductor materialstructure by the insulative material.
 2. The integrated transistor ofclaim 1 wherein the conductive gating structure consists of themolybdenum.
 3. The integrated transistor of claim 1 wherein theconductive gating structure comprises one or more of W, Ta, Ti, Co andNi in addition to the molybdenum.
 4. The integrated transistor of claim1 wherein the second source/drain region is vertically offset relativeto the first source/drain region.
 5. The integrated transistor of claim1 wherein the semiconductor material comprises silicon.
 6. Theintegrated transistor of claim 1 wherein the semiconductor materialcomprises germanium.
 7. The integrated transistor of claim 1 wherein thesemiconductor material comprises semiconductor oxide.
 8. The integratedtransistor of claim 1 wherein the insulative material comprises SiO₂. 9.The integrated transistor of claim 1 wherein the insulative materialcomprises one or more high-k compositions.
 10. An integrated assembly,comprising: a first series of first conductive lines, the firstconductive lines extending along a first direction; pillars ofsemiconductor material extending upwardly over the first conductivelines; each of the pillars including a lower source/drain region, anupper source/drain region and a channel region between the upper andlower source/drain regions; the pillars having sidewalls; the lowersource/drain regions being coupled with the first conductive lines;sections of the semiconductor material extending outwardly from a lowestregion of the pillars over the first conductive lines and extending anentirety of a distance between the pillars; insulative material alongthe sidewalls and across the sections of semiconductor material; asecond series of second conductive lines; the second conductive linesextending along a second direction which crosses the first direction;the second conductive lines including gating regions operativelyproximate the channel regions, with said gating regions being laterallyoffset from the channel regions by at least the insulative material; thesecond conductive lines comprising molybdenum; and storage elementscoupled with the upper source/drain regions.
 11. The integrated assemblyof claim 10 wherein the second conductive lines consist of themolybdenum.
 12. The integrated assembly of claim 10 wherein each of thesecond conductive lines has a lateral thickness within a range of fromabout 10 Å to about 100 Å.
 13. The integrated assembly of claim 10wherein the storage elements comprise capacitors.
 14. The integratedassembly of claim 13 wherein the capacitors are ferroelectriccapacitors.
 15. The integrated assembly of claim 13 wherein thecapacitors are non-ferroelectric capacitors.
 16. The integrated assemblyof claim 10 wherein the semiconductor material comprises silicon. 17.The integrated assembly of claim 10 wherein the insulative materialcomprises silicon dioxide.
 18. The integrated assembly of claim 10wherein the first conductive lines are digit lines and are coupled withsense-amplifier-circuitry.
 19. The integrated assembly of claim 18wherein the second conductive lines are wordlines and are coupled withwordline-driver-circuitry.
 20. The integrated assembly of claim 10wherein the insulative material is a first insulative material andfurther comprising a second insulative material extending over the firstinsulative material across the sections of semiconductor, the secondinsulative material differing from the first insulative material.